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| Previous Datasheet Index Next Data Sheet PD - 5.024A CPV363MU IGBT SIP MODULE Features * * * * Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve Q1 D1 9 4 6 Q2 D2 12 Q4 D4 18 Q3 1 Ultra-Fast IGBT D3 15 3 Q5 D5 16 D6 10 Q6 Product Summary 7 13 19 Output Current in a Typical 20 kHz Motor Drive 5.4 ARMS per phase (1.7 kW total) with T C = 90C, T J = 125C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1) Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. IMS-2 Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM IF @ T C = 100C IFM VGE VISOL PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 min. Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 13 6.8 40 40 6.1 40 20 2500 36 14 -40 to +150 300 (0.063 in. (1.6mm) from case) 5-7 lbf*in (0.55-0.8 N*m) Units V A V VRMS W C Thermal Resistance Parameter RJC (IGBT) RJC (DIODE) RCS (MODULE) Wt Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case, each diode, one diode in conduction Case-to-Sink,flat,greased surface Weight of module Typ. -- -- 0.1 20 (0.7) Max. 3.5 5.5 -- -- Units C/W g (oz) Revision 1 C-749 To Order Previous Datasheet Index Next Data Sheet CPV363MU Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES VFM IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, I C = 250A -- 0.63 -- V/C VGE = 0V, IC = 1.0mA -- 1.9 2.4 IC = 6.8A V GE = 15V -- 2.3 -- V IC = 13A See Fig. 2, 5 -- 1.8 -- IC = 6.8A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 4.0 6.0 -- S VCE = 100V, I C = 6.8A -- -- 250 A VGE = 0V, V CE = 600V -- -- 2500 VGE = 0V, V CE = 600V, T J = 150C -- 1.4 1.7 V IC = 12A See Fig. 13 -- 1.3 1.6 IC = 12A, T J = 150C -- -- 500 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During t b Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 29 4.8 12 25 15 92 93 0.23 0.13 0.36 25 15 160 200 0.71 660 100 11 42 80 3.5 5.6 80 220 180 116 Max. Units Conditions 36 IC = 6.8A 6.8 nC VCC = 400V 17 See Fig. 8 -- TJ = 25C -- ns IC = 6.8A, V CC = 480V 200 VGE = 15V, R G = 23 190 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 11, 18 0.62 -- TJ = 150C, See Fig. 9, 10, 11, 18 -- ns IC = 6.8A, V CC = 480V -- VGE = 15V, R G = 23 -- Energy losses include "tail" and -- mJ diode reverse recovery. -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 60 ns TJ = 25C See Fig. 120 TJ = 125C 14 I F = 12A 6.0 A TJ = 25C See Fig. 10 TJ = 125C 15 V R = 200V 180 nC TJ = 25C See Fig. 600 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) VCC=80%(V CES), VGE=20V, L=10H, R G= 23, ( See fig. 19 ) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. C-750 To Order Previous Datasheet Index Next Data Sheet CPV363MU 10 3.1 6 1.9 To tal O utput P ow er (kW ) 20 8 2.5 L oad C u rren t (A ) S 4 1.2 2 TC = 90C TJ = 125C Power Factor = 0.8 Modulation Depth = 0.8 VC C = 60% of Rated Voltage 0.1 1 10 100 0.6 0 0 f, F re quenc y (kH z) Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave 1000 1000 I C , C ollector-to-E mitter C urrent (A ) IC , C ollector-to-E mitter C urrent (A ) 100 100 TJ = 2 5C TJ = 15 0 C 10 TJ = 1 50 C 10 TJ = 2 5C 1 1 1 V G E = 15 V 20 s P U L S E W ID TH 10 0.1 5 10 V C C = 1 00 V 5 s P UL S E W IDTH 15 V C E , C o llector-to-Em itter V oltage (V) V G E , G ate -to-E m itter V olta ge (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-751 To Order Previous Datasheet Index Next Data Sheet CPV363MU 25 V G E = 15 V 4.0 VG E = 1 5 V 80 s P UL S E W ID TH V C E , C ollector-to-E m itter V oltage (V) M aximum D C Collector Current (A ) 20 3.5 I C = 24 A 3.0 15 2.5 10 I C = 12 A 2.0 5 I C = 6.0A 1.5 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 1 00 120 140 160 T C , C ase Tem perature (C ) TC , C ase Tem perature (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 10 T h e rm a l R e s p o n s e (Z th JC ) D = 0 .5 0 1 0 .2 0 0 .1 0 0 .0 5 0.1 0 .0 2 0 .0 1 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) N o te s : 1 . D u ty fa c to r D = t 1 /t PD M t 1 t2 2 0.01 0.00001 2 . P e a k T J = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , R e c ta n gu la r P u ls e D u ra tio n (s e c ) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case C-752 To Order Previous Datasheet Index Next Data Sheet CPV363MU 14 0 0 20 12 0 0 C , Capacitance (pF ) 10 0 0 Cies 800 Coes 600 V G E , G ate-to-E m itter V oltage (V) V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc V C E = 4 00 V I C = 12A 16 12 8 400 Cres 200 4 0 1 10 100 0 0 5 10 15 20 25 30 V C E , C o llector-to-Em itter V oltage (V) Q g , Total G ate C harge (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0 .6 6 0 .6 4 To ta l S w itch in g Los ses (m J ) To ta l S w itching L osses (m J) VC C VG E TC IC = 4 80 V = 15 V = 25 C = 1 2A 10 R G = 23 V GE = 15 V V CC = 4 80 V I C = 24 A 0 .6 2 I C = 1 2A 1 0 .6 0 I C = 6.0 A 0 .5 8 0 .5 6 0 .5 4 0 10 20 30 40 50 60 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 R G , G ate R es istance ( ) W TC , C ase Tem perature (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-753 To Order Previous Datasheet Index Next Data Sheet CPV363MU 3.0 Total Sw itching Losses (m J) 2.5 I C , C o llec to r-to-E m itter C urre nt (A ) RG TC V CC VGE = 23 = 150 C = 4 80 V = 15 V 1000 VG E E 20 V G= T J = 125 C 100 2.0 S A FE O P E RA TIN G A RE A 10 1.5 1.0 1 0.5 0.0 5 10 15 20 25 0.1 1 10 100 1000 I C , C o llector-to -E m itte r Current (A ) V C E , C o lle cto r-to-E m itte r V olta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) TJ = 150C 10 TJ = 125C TJ = 25C 1 0.4 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-754 To Order Previous Datasheet Index Next Data Sheet CPV363MU 160 100 VR = 200V TJ = 125C TJ = 25C 120 VR = 200V TJ = 125C TJ = 25C I F = 24A I F = 12A 80 I IRRM - (A) I F = 24A 10 t rr - (ns) I F = 12A IF = 6.0A I F = 6.0A 40 0 100 di f /dt - (A/s) 1000 1 100 di f /dt - (A/s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 600 10000 VR = 200V TJ = 125C TJ = 25C VR = 200V TJ = 125C TJ = 25C di(rec)M/dt - (A/s) 400 1000 Q RR - (nC) IF = 6.0A I F = 24A I F = 12A I F = 12A 100 200 I F = 24A IF = 6.0A 0 100 di f /dt - (A/s) 1000 10 100 1000 di f /dt - (A/s) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt C-755 To Order Previous Datasheet Index Next Data Sheet CPV363MU 90% Vge +Vge Same type device as D.U.T. Vce Ic 80% of Vce 430F D.U.T. 10% Vce Ic 90% Ic 5% Ic td(off) tf Eoff = t1+5S Vce ic dt t1 Fig.18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 10% Irr Vcc Vpk Irr trr Ic Qrr = t1 t2 trr id dt tx t4 Erec = Vd id dt t3 t1 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining E on, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining E rec, trr, Qrr, Irr Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 5 - IMS-2 Package (13 pins) C-756 Section D - page D-14 To Order |
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